What are the safe working conditions for IGBTs?

1, drive circuit: Because of the compromise between IGBT UCE(sat) and short circuit tolerance, it is recommended to choose the grid voltage +UG = 15V±10%, -ug =5~10V. The grid resistance is closely related to the IGBT on and off characteristics. The switching loss is reduced in RG hours, the switching time is shortened, and the switching pulse voltage is increased. The appropriate RG value should be selected based on the best compromise of the surge voltage and switching loss (depending on the frequency), usually 10 to 27Ω. To prevent the grid from opening, connect the grid to the emitter with a resistance of 20 to 30 kω.

2, protection circuit: IGBT module is used at high frequency, wiring inductance is easy to produce peak voltage, must pay attention to wiring inductance and component configuration. The protection items should be: over current protection, over voltage protection, grid over voltage and under voltage protection, safe working area, overheating protection.

3, absorption circuit: because IGBT switching speed is fast, easy to produce surge voltage, so must have a surge clamp circuit.

4, IGBT parallel use should consider the grid circuit wiring, current imbalance and temperature imbalance between the device and other issues.